Use of indium to define work function of p-type doped polysilicon

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Title: Use of indium to define work function of p-type doped polysilicon
Date: 2006
Citation: Colombo, L., Chambers, J. J., Rotondaro, A. L. (2006). Use of indium to define work function of p-type doped polysilicon. U.S. Patent No. 7,026,218. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1330


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