Hydrogen free integration of high-k gate dielectrics

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Title: Hydrogen free integration of high-k gate dielectrics
Date: 2006
Citation: Colombo, L., Chambers, J. J., & Visokay, M. R. (2006). Hydrogen free integration of high-k gate dielectrics. U.S. Patent No. 7,067,434. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1333


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