Method of forming a patterned substantially crystalline TA2O5 comprising material, and method of forming a capacitor having a capacitor dilelectric region comprising substantially crystalline TA2O5 comprising material
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2004
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Basceri, C., Derderian, G. J., Visokay, M. R., Drynan, J. M., & Sandhu, G. S. (2004). Method of forming a patterned substantially crystalline TA2O5 comprising material, and method of forming a capacitor having a capacitor dilelectric region comprising substantially crystalline TA2O5 comprising material. U.S. Patent No. 6,767,806. Washington, DC: U.S. Patent and Trademark Office.