Method of forming a patterned substantially crystalline TA2O5 comprising material, and method of forming a capacitor having a capacitor dilelectric region comprising substantially crystalline TA2O5 comprising material

Show full item record

Title: Method of forming a patterned substantially crystalline TA2O5 comprising material, and method of forming a capacitor having a capacitor dilelectric region comprising substantially crystalline TA2O5 comprising material
Date: 2004
Citation: Basceri, C., Derderian, G. J., Visokay, M. R., Drynan, J. M., & Sandhu, G. S. (2004). Method of forming a patterned substantially crystalline TA2O5 comprising material, and method of forming a capacitor having a capacitor dilelectric region comprising substantially crystalline TA2O5 comprising material. U.S. Patent No. 6,767,806. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1380


Files in this item

Files Size Format View
US_6767806_B2_I.pdf 148.8Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record