Methods of depositing a layer comprising tungsten and methods of forming a transistor gate line

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Title: Methods of depositing a layer comprising tungsten and methods of forming a transistor gate line
Date: 2003
Citation: Basceri, C., Derderian, G. J., Visokay, M. R., Drynan, J. M., & Sandhu, G. S. (2003). Methods of depositing a layer comprising tungsten and methods of forming a transistor gate line. U.S. Patent No. 6,617,250. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1393


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