Reliable high voltage gate dielectric layers using a dual nitridation process

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Title: Reliable high voltage gate dielectric layers using a dual nitridation process
Date: 2007
Citation: Khamankar, R., Grider, D. T., Niimi, H., Gurba, A., Tran, T., & Chambers, J. J. (2007). Reliable high voltage gate dielectric layers using a dual nitridation process. U.S. Patent No. 7,183,165. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1400


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