Method for improving the sidewall stoichiometry of thin film capacitors

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Title: Method for improving the sidewall stoichiometry of thin film capacitors
Date: 2001
Citation: Basceri, C. (2001). Method for improving the sidewall stoichiometry of thin film capacitors. U.S. Patent No. 6,194,229. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1439


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