Method for forming a field effect transistor having a high-k gate dielectric and related structure
| Title: | Method for forming a field effect transistor having a high-k gate dielectric and related structure |
| Date: | 2004 |
| Citation: | Jeon, J. S., & Zhong, H. (2004). Method for forming a field effect transistor having a high-k gate dielectric and related structure. U.S. Patent No. 6,797,572. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1446 |
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