Method for forming a field effect transistor having a high-k gate dielectric and related structure

Show full item record

Title: Method for forming a field effect transistor having a high-k gate dielectric and related structure
Date: 2004
Citation: Jeon, J. S., & Zhong, H. (2004). Method for forming a field effect transistor having a high-k gate dielectric and related structure. U.S. Patent No. 6,797,572. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1446


Files in this item

Files Size Format View
US_6797572_B1_I.pdf 134.4Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record