Method for forming a field effect transistor having a high-k gate dielectric and related structure
| dc.date.accessioned | 2008-10-14T17:28:30Z | |
| dc.date.available | 2008-10-14T17:28:30Z | |
| dc.date.issued | 2004 | |
| dc.identifier.citation | Jeon, J. S., & Zhong, H. (2004). Method for forming a field effect transistor having a high-k gate dielectric and related structure. U.S. Patent No. 6,797,572. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1446 | |
| dc.format.extent | 137708 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | Method for forming a field effect transistor having a high-k gate dielectric and related structure | |
| dc.type | Patent |
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| Files | Size | Format | View |
|---|---|---|---|
| US_6797572_B1_I.pdf | 134.4Kb |
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