Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
Title: | Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices |
Date: | 2002 |
Citation: | Alok, D. (2002). Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices. U.S. Patent No. 6,407,014. Washington, DC: U.S. Patent and Trademark Office. |
URI: | http://www.lib.ncsu.edu/resolver/1840.2/1448 |
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