Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices

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Title: Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
Date: 2002
Citation: Alok, D. (2002). Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices. U.S. Patent No. 6,407,014. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1448


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