Growth of polycrystalline semiconductor film with intermetallic nucleating layer

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Title: Growth of polycrystalline semiconductor film with intermetallic nucleating layer
Date: 1979
Citation: Cuomo, J. J., DiStefano, T. H., & Rosenberg, R. (1979). Growth of polycrystalline semiconductor film with intermetallic nucleating layer. U.S. Patent No. 4,132,571. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1468


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