Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique

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Title: Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique
Date: 1982
Citation: Adams, A. C., Aspnes, D. E., & Bagley, B. G. (1982). Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique. U.S. Patent No. 4,357,179. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1480


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