Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
| Title: | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
| Date: | 1995 |
| Citation: | Davis, R. F., Carter, C. H., & Hunter, C. E. (1995). Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide. U.S. Patent No. RE34,861. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1526 |
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