Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide

Show full item record

Title: Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
Date: 1995
Citation: Davis, R. F., Carter, C. H., & Hunter, C. E. (1995). Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide. U.S. Patent No. RE34,861. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1526


Files in this item

Files Size Format View
US_RE34861_E_I.pdf 193.7Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record