Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
| dc.date.accessioned | 2008-10-15T19:08:10Z | |
| dc.date.available | 2008-10-15T19:08:10Z | |
| dc.date.issued | 1995 | |
| dc.identifier.citation | Davis, R. F., Carter, C. H., & Hunter, C. E. (1995). Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide. U.S. Patent No. RE34,861. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1526 | |
| dc.format.extent | 198410 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide | |
| dc.type | Patent |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| US_RE34861_E_I.pdf | 193.7Kb |
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