Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide

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dc.date.accessioned 2008-10-15T19:08:10Z
dc.date.available 2008-10-15T19:08:10Z
dc.date.issued 1995
dc.identifier.citation Davis, R. F., Carter, C. H., & Hunter, C. E. (1995). Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide. U.S. Patent No. RE34,861. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/1526
dc.format.extent 198410 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
dc.type Patent


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