Hollow cathode enhanced plasma for high rate reactive ion etching and deposition

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Title: Hollow cathode enhanced plasma for high rate reactive ion etching and deposition
Date: 1987
Citation: Bumble, B., Cuomo, J. J., Logan, J. S., & Rossnagel, S. M. (1987). Hollow cathode enhanced plasma for high rate reactive ion etching and deposition. U.S. Patent No. 4,637,853. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1532


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