Hollow cathode enhanced plasma for high rate reactive ion etching and deposition

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dc.date.accessioned 2008-10-15T19:25:28Z
dc.date.available 2008-10-15T19:25:28Z
dc.date.issued 1987
dc.identifier.citation Bumble, B., Cuomo, J. J., Logan, J. S., & Rossnagel, S. M. (1987). Hollow cathode enhanced plasma for high rate reactive ion etching and deposition. U.S. Patent No. 4,637,853. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/1532
dc.format.extent 137428 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Hollow cathode enhanced plasma for high rate reactive ion etching and deposition
dc.type Patent


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