Hollow cathode enhanced plasma for high rate reactive ion etching and deposition
No Thumbnail Available
Date
1987
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
Bumble, B., Cuomo, J. J., Logan, J. S., & Rossnagel, S. M. (1987). Hollow cathode enhanced plasma for high rate reactive ion etching and deposition. U.S. Patent No. 4,637,853. Washington, DC: U.S. Patent and Trademark Office.
