Dislocation density reduction in gallium arsenide on silicon heterostructures
| Title: | Dislocation density reduction in gallium arsenide on silicon heterostructures |
| Date: | 1993 |
| Citation: | Narayan, J. & Fan, J. C. (1993). Dislocation density reduction in gallium arsenide on silicon heterostructures. U.S. Patent No. 5,208,182. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1585 |
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| US_5208182_A_I.pdf | 184.1Kb |
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