Dislocation density reduction in gallium arsenide on silicon heterostructures
No Thumbnail Available
Date
1993
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
Narayan, J. & Fan, J. C. (1993). Dislocation density reduction in gallium arsenide on silicon heterostructures. U.S. Patent No. 5,208,182. Washington, DC: U.S. Patent and Trademark Office.
