Dislocation density reduction in gallium arsenide on silicon heterostructures

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Title: Dislocation density reduction in gallium arsenide on silicon heterostructures
Date: 1993
Citation: Narayan, J. & Fan, J. C. (1993). Dislocation density reduction in gallium arsenide on silicon heterostructures. U.S. Patent No. 5,208,182. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1585


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