Lateral silicon carbide semiconductor device having a drift region with a varying doping level

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Title: Lateral silicon carbide semiconductor device having a drift region with a varying doping level
Date: 2000
Citation: Alok, D., Mukherjee, S., & Arnold, E. (2000). Lateral silicon carbide semiconductor device having a drift region with a varying doping level. U.S. Patent No. 6,011,278. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1648


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