Lateral silicon carbide semiconductor device having a drift region with a varying doping level
| Title: | Lateral silicon carbide semiconductor device having a drift region with a varying doping level |
| Date: | 2000 |
| Citation: | Alok, D., Mukherjee, S., & Arnold, E. (2000). Lateral silicon carbide semiconductor device having a drift region with a varying doping level. U.S. Patent No. 6,011,278. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1648 |
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