Method of forming a laterally-varying charge profile in silicon carbide substrate

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Title: Method of forming a laterally-varying charge profile in silicon carbide substrate
Date: 2000
Citation: Alok, D., Taskar, N., & Letavic, T. (2000). Method of forming a laterally-varying charge profile in silicon carbide substrate. U.S. Patent No. 6,096,663. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1649


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