Method of forming a laterally-varying charge profile in silicon carbide substrate
| Title: | Method of forming a laterally-varying charge profile in silicon carbide substrate |
| Date: | 2000 |
| Citation: | Alok, D., Taskar, N., & Letavic, T. (2000). Method of forming a laterally-varying charge profile in silicon carbide substrate. U.S. Patent No. 6,096,663. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1649 |
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| US_6096663_A_I.pdf | 131.3Kb |
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