Passivated silicon carbide devices with low leakage current and method of fabricating
| Title: | Passivated silicon carbide devices with low leakage current and method of fabricating |
| Date: | 2002 |
| Citation: | Alok, D., & Arnold, E. (2002). Passivated silicon carbide devices with low leakage current and method of fabricating. U.S. Patent No. 6,373,076. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1674 |
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| Files | Size | Format | View |
|---|---|---|---|
| US_6373076_B1_I.pdf | 126.7Kb |
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