Passivated silicon carbide devices with low leakage current and method of fabricating

Show full item record

Title: Passivated silicon carbide devices with low leakage current and method of fabricating
Date: 2002
Citation: Alok, D., & Arnold, E. (2002). Passivated silicon carbide devices with low leakage current and method of fabricating. U.S. Patent No. 6,373,076. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1674


Files in this item

Files Size Format View
US_6373076_B1_I.pdf 126.7Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record