Silicon-on-insulator (SOI) semiconductor structure with additional trench including a conductive layer

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Title: Silicon-on-insulator (SOI) semiconductor structure with additional trench including a conductive layer
Date: 2003
Citation: Chittipeddi, S., & Kelly, M. J. (2003). Silicon-on-insulator (SOI) semiconductor structure with additional trench including a conductive layer. U.S. Patent No. 6,538,283. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1679


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