Silicon-on-insulator (SOI) semiconductor structure with additional trench including a conductive layer

Show simple item record

dc.date.accessioned 2008-10-16T17:17:13Z
dc.date.available 2008-10-16T17:17:13Z
dc.date.issued 2003
dc.identifier.citation Chittipeddi, S., & Kelly, M. J. (2003). Silicon-on-insulator (SOI) semiconductor structure with additional trench including a conductive layer. U.S. Patent No. 6,538,283. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/1679
dc.format.extent 129498 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Silicon-on-insulator (SOI) semiconductor structure with additional trench including a conductive layer
dc.type Patent


Files in this item

Files Size Format View
US_6538283_B1_I.pdf 126.4Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record