Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes
| Title: | Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes |
| Date: | 2003 |
| Citation: | Brousseau, L. C. (2003). Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes. U.S. Patent No. 6,653,653. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1685 |
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| Files | Size | Format | View |
|---|---|---|---|
| US_6653653_B2_I.pdf | 154.8Kb |
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