Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes
| dc.date.accessioned | 2008-10-16T17:26:21Z | |
| dc.date.available | 2008-10-16T17:26:21Z | |
| dc.date.issued | 2003 | |
| dc.identifier.citation | Brousseau, L. C. (2003). Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes. U.S. Patent No. 6,653,653. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1685 | |
| dc.format.extent | 158563 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes | |
| dc.type | Patent |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| US_6653653_B2_I.pdf | 154.8Kb |
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