Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor

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Title: Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor
Date: 2003
Citation: Alok, D., Arnold, E., Egloff, R., & Mukherjee, S. (2003). Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor. U.S. Patent No. 6,559,068. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1689


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