Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor
Title: | Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor |
Date: | 2003 |
Citation: | Alok, D., Arnold, E., Egloff, R., & Mukherjee, S. (2003). Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor. U.S. Patent No. 6,559,068. Washington, DC: U.S. Patent and Trademark Office. |
URI: | http://www.lib.ncsu.edu/resolver/1840.2/1689 |
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