Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same
| Title: | Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same |
| Date: | 2003 |
| Citation: | Alok, D., & Jos, R. (2003). Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same. U.S. Patent No. 6,620,697. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1690 |
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| US_6620697_B1_I.pdf | 147.9Kb |
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