Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same
| dc.date.accessioned | 2008-10-16T18:25:43Z | |
| dc.date.available | 2008-10-16T18:25:43Z | |
| dc.date.issued | 2003 | |
| dc.identifier.citation | Alok, D., & Jos, R. (2003). Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same. U.S. Patent No. 6,620,697. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1690 | |
| dc.format.extent | 151483 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same | |
| dc.type | Patent |
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| Files | Size | Format | View |
|---|---|---|---|
| US_6620697_B1_I.pdf | 147.9Kb |
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