Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates
| Title: | Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates |
| Date: | 2003 |
| Citation: | Croswell, R., & Dunn, G. (2003). Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates. U.S. Patent No. 6,638,872. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1695 |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| US_6638872_B1_I.pdf | 127.3Kb |
View/ |
