Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates
| dc.date.accessioned | 2008-10-16T18:33:50Z | |
| dc.date.available | 2008-10-16T18:33:50Z | |
| dc.date.issued | 2003 | |
| dc.identifier.citation | Croswell, R., & Dunn, G. (2003). Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates. U.S. Patent No. 6,638,872. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1695 | |
| dc.format.extent | 130399 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates | |
| dc.type | Patent |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| US_6638872_B1_I.pdf | 127.3Kb |
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