Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers

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Title: Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
Date: 2004
Citation: Agarwal, V. K., Derderian, G., Sandhu, G. S., Li, W., M., Visokay, M., Basceri, C., & Yang, S. (2004). Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers. U.S. Patent No. 6,833,576. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1702


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