Passivated silicon carbide devices with low leakage current and method of fabricating

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Title: Passivated silicon carbide devices with low leakage current and method of fabricating
Date: 2004
Citation: Alok, D., & Arnold, E. (2004). Passivated silicon carbide devices with low leakage current and method of fabricating. U.S. Patent No. 6,703,276. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1710


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