Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries
| Title: | Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries |
| Date: | 2006 |
| Citation: | Carlisle, J. A., Auciello, O., & Birrell, J. (2006). Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries. U.S. Patent No. 7,128,889. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1732 |
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