Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries
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2006
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Carlisle, J. A., Auciello, O., & Birrell, J. (2006). Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries. U.S. Patent No. 7,128,889. Washington, DC: U.S. Patent and Trademark Office.