Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film

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Title: Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film
Date: 2006
Citation: Cross, J. S., Tsukada, M., Horii, Y., Gruverman, A., & Kingon, A. (2006). Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film. U.S. Patent No. 7,075,135. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1743


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