Plasma enhanced chemical vapor deposition method of forming a titanium silicide comprising layer

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Title: Plasma enhanced chemical vapor deposition method of forming a titanium silicide comprising layer
Date: 2006
Citation: Basceri, C., Vasilyeva, I., Derraa, A., Campbell, P. H., & Sandhu, G. S. (2006). Plasma enhanced chemical vapor deposition method of forming a titanium silicide comprising layer. U.S. Patent No. 7,033,642. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1752


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