Method of forming a layer comprising epitaxial silicon and a field effect transistor

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Title: Method of forming a layer comprising epitaxial silicon and a field effect transistor
Date: 2006
Citation: Ramaswamy, N., Sandhu, G. S., Basceri, C., & Blomiley, E. R. (2006). Method of forming a layer comprising epitaxial silicon and a field effect transistor. U.S. Patent No. 7,132,355. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1765


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