Method of forming semi-insulating silicon carbide single crystal

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Title:	Method of forming semi-insulating silicon carbide single crystal
Date:	2007
Citation:	Basceri, C., Yushin, N., & Balkas, C. M. (2007). Method of forming semi-insulating silicon carbide single crystal. U.S. Patent No. 7,276,117. Washington, DC: U.S. Patent and Trademark Office.
URI:	http://www.lib.ncsu.edu/resolver/1840.2/1796



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