Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
| Title: | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers |
| Date: | 2007 |
| Citation: | Agarwal, V. K., Derderian, G., Sandhu, G. S., Li, W. M., Visokay, M., Basceri, C., & Yang, S. (2007). Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers. U.S. Patent No. 7,253,076. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1809 |
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