Method of manufacturing a vertical junction field effect transistor having an epitaxial gate

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Title: Method of manufacturing a vertical junction field effect transistor having an epitaxial gate
Date: 2007
Citation: Harris, C., Konstantinov, A., & Basceri, C. (2007). Method of manufacturing a vertical junction field effect transistor having an epitaxial gate. U.S. Patent No. 7,279,368. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1814


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