Method of manufacturing a vertical junction field effect transistor having an epitaxial gate
| Title: | Method of manufacturing a vertical junction field effect transistor having an epitaxial gate |
| Date: | 2007 |
| Citation: | Harris, C., Konstantinov, A., & Basceri, C. (2007). Method of manufacturing a vertical junction field effect transistor having an epitaxial gate. U.S. Patent No. 7,279,368. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1814 |
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|---|---|---|---|
| US_7279368_B2_I.pdf | 111.3Kb |
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