Method of manufacturing gallium nitride based high-electron mobility devices
Title: | Method of manufacturing gallium nitride based high-electron mobility devices |
Date: | 2008 |
Citation: | Harris, C., Gehrke, T., Weeks, T. W., & Basceri, C. (2008). Method of manufacturing gallium nitride based high-electron mobility devices. U.S. Patent No. 7,364,988. Washington, DC: U.S. Patent and Trademark Office. |
URI: | http://www.lib.ncsu.edu/resolver/1840.2/1820 |
Files in this item
Files | Size | Format | View |
---|---|---|---|
US_7364988_B2_I.pdf | 132.0Kb |
View/ |