Method of manufacturing gallium nitride based high-electron mobility devices

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Title: Method of manufacturing gallium nitride based high-electron mobility devices
Date: 2008
Citation: Harris, C., Gehrke, T., Weeks, T. W., & Basceri, C. (2008). Method of manufacturing gallium nitride based high-electron mobility devices. U.S. Patent No. 7,364,988. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1820


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