Method of manufacturing gallium nitride based high-electron mobility devices
| Title: | Method of manufacturing gallium nitride based high-electron mobility devices |
| Date: | 2008 |
| Citation: | Harris, C., Gehrke, T., Weeks, T. W., & Basceri, C. (2008). Method of manufacturing gallium nitride based high-electron mobility devices. U.S. Patent No. 7,364,988. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1820 |
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