Method of making high current, high voltage breakdown field effect transistor

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Title: Method of making high current, high voltage breakdown field effect transistor
Date: 1993
Citation: Mishra, U. K., & Trew, R. J. (1993). Method of making high current, high voltage breakdown field effect transistor. U.S. Patent No. 5180681. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1858


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