Method of making high current, high voltage breakdown field effect transistor
Title: | Method of making high current, high voltage breakdown field effect transistor |
Date: | 1993 |
Citation: | Mishra, U. K., & Trew, R. J. (1993). Method of making high current, high voltage breakdown field effect transistor. U.S. Patent No. 5180681. Washington, DC: U.S. Patent and Trademark Office. |
URI: | http://www.lib.ncsu.edu/resolver/1840.2/1858 |
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