Method of fabricating silicon carbide field effect transistor

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Title: Method of fabricating silicon carbide field effect transistor
Date: 1994
Citation: Baliga, B. J., & Bhatnagar, M. (1994). Method of fabricating silicon carbide field effect transistor. U.S. Patent No. 5322802. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1866


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