Method of fabricating silicon carbide field effect transistor

No Thumbnail Available

Date

1994

Authors

Advisors

Journal Title

Series/Report No.

Journal ISSN

Volume Title

Publisher

Abstract

Description

Keywords

Citation

Baliga, B. J., & Bhatnagar, M. (1994). Method of fabricating silicon carbide field effect transistor. U.S. Patent No. 5322802. Washington, DC: U.S. Patent and Trademark Office.

Degree

Discipline

Collections