Metal-insulator-semiconductor capacitor formed on silicon carbide

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Title: Metal-insulator-semiconductor capacitor formed on silicon carbide
Date: 1989
Citation: Palmour, J. W. (1989). Metal-insulator-semiconductor capacitor formed on silicon carbide. U.S. Patent No. 4875083. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1886


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