Integrated heterostructure of Group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same

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Title: Integrated heterostructure of Group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
Date: 1994
Citation: Schetzina, J. F. (1994). Integrated heterostructure of Group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same. U.S. Patent No. 5294833. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1921


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