Method of fabricating epitaxially deposited ohmic contacts using group II-V I
No Thumbnail Available
Date
1994
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
Schetzina, J. F. (1994). Method of fabricating epitaxially deposited ohmic contacts using group II-V I. U.S. Patent No. 5366927. Washington, DC: U.S. Patent and Trademark Office.
