Method of fabricating epitaxially deposited ohmic contacts using group II-V I
| Title: | Method of fabricating epitaxially deposited ohmic contacts using group II-V I |
| Date: | 1994 |
| Citation: | Schetzina, J. F. (1994). Method of fabricating epitaxially deposited ohmic contacts using group II-V I. U.S. Patent No. 5366927. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1923 |
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