Method of fabricating epitaxially deposited ohmic contacts using group II-V I

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dc.date.accessioned 2008-10-27T15:13:07Z
dc.date.available 2008-10-27T15:13:07Z
dc.date.issued 1994
dc.identifier.citation Schetzina, J. F. (1994). Method of fabricating epitaxially deposited ohmic contacts using group II-V I. U.S. Patent No. 5366927. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/1923
dc.format.extent 683570 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Method of fabricating epitaxially deposited ohmic contacts using group II-V I
dc.type Patent


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