Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
| dc.date.accessioned | 2008-10-27T15:38:26Z | |
| dc.date.available | 2008-10-27T15:38:26Z | |
| dc.date.issued | 1994 | |
| dc.identifier.citation | Schetzina, J. F. (1994). Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same. U.S. Patent No. 5351255. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1926 | |
| dc.format.extent | 1021892 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same | |
| dc.type | Patent |
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