Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up

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Title: Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up
Date: 1995
Citation: Baliga, B. J. (1995). Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up. U.S. Patent No. 5396087. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1929


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