High voltage silicon carbide MESFETs and methods of fabricating same

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Title: High voltage silicon carbide MESFETs and methods of fabricating same
Date: 1995
Citation: Baliga, B. J. (1995). High voltage silicon carbide MESFETs and methods of fabricating same. U.S. Patent No. 5399883. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1930


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