Method of fabricating high voltage silicon carbide MESFETs

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Title: Method of fabricating high voltage silicon carbide MESFETs
Date: 1995
Citation: Baliga, B. J. (1995). Method of fabricating high voltage silicon carbide MESFETs. U.S. Patent No. 5459089. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1933


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